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Miniaturization and increasing functional integration as the electronicindustry drives force the development of feature sizes down to the nanometer range.Moreover, harsh environmental conditions and new porous or nano-particle filled materialsintroduced on both chip and package level - low-k and ultra low-k materials inBack-end of line (BEoL) layers of advanced CMOS technologies, in particular - causenew challenges for reliability analysis and prediction. The authors show a combinednumerical/experimental approach and results towards optimized fracture and fatigueresistance of those structures under chip package interaction aspects by making use ofintegral bulk and interface fracture concepts, VCCT and cohesive zone models in multiscaleand multi-failure modeling approaches with several kinds of failure/fatigue phenomena.Probable crack paths and interactions between material damaging, ratchetingand interface fracture will be discussed. As important preconditions for high-qualitysimulations, nano-indentation AFM, FIB and EBSD provide the desired properties,while FIB-based trench techniques using deformation analyses by grayscale correlationand numerical simulations provide the intrinsic stresses especially of thin films in BEoLlayers.