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Divergence of atomic flux due to electromigration has been formulated for Al polycrystalline line covered with a passivation layer. The formula has been identified as a governing parameter for electromigration damage in the line through experimental verification. It is known that local depletion of atoms, i.e. void appears in metal line used in electronic devices as a result of electromigration. So far, the velocity of depletion of atoms was expressed using the parameter to construct a derivation method for characteristic constants of electromigration damage in Al line. In this study, the electromigration characteristic constants of typical Cu line used in electronic devices are derived based on the derivation method for Al line. Through the discussion about the validity of the obtained constants, it is shown that the parameter-based method can determine the electromigration characteristic constants appropriately.